vishay siliconix SIR876DP document number: 65934 s10-2684-rev. b, 22-nov-10 www.vishay.com 1 new product n-channel 100 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc primary side switch ? telecom/server 48 v, full/half-bridge dc-to-dc ? industrial product summary v ds (v) r ds(on) ( ? ) i d (a) a q g (typ.) 100 0.0108 at v gs = 10 v 40 16.9 nc 0.0114 at v gs = 7.5 v 40 0.0145 at v gs = 4.5 v 40 ordering information: SIR876DP-t1-ge3 (lead (pb)-free and halogen-free) 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak ? so-8 bottom view n-channel mosfet g d s notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak so-8 is a leadless package. t he end of the lead terminal is exposed copper (not plated) as a result of the singulat ion process in manufacturing. a solder fi llet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 65 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 40 a a t c = 70 c 40 a t a = 25 c 15.2 b, c t a = 70 c 12.1 b, c pulsed drain current i dm 80 continuous source-drain diode current t c = 25 c i s 40 a t a = 25 c 4.5 b, c single pulse avalanche current l = ? 0.1 mh i as 25 single pulse avalanche energy e as 31.2 mj maximum power dissipation t c = 25 c p d 62.5 w t c = 70 c 40 t a = 25 c 5.0 b, c t a = 70 c 3.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 10 s r thja 20 25 c/w maximum junction-to-case (drain) steady state r thjc 1.6 2.0
www.vishay.com 2 document number: 65934 s10-2684-rev. b, 22-nov-10 vishay siliconix SIR876DP new product notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 100 v v ds temperature coefficient ? v ds /t j i d = 250 a 47 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 5.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.8 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0087 0.0108 ? v gs = 7.5 v, i d = 15 a 0.0092 0.0114 v gs = 4.5 v, i d = 10 a 0.0115 0.0145 forward transconductance a g fs v ds = 10 v, i d = 20 a 57 s dynamic b input capacitance c iss v ds = 50 v, v gs = 0 v, f = 1 mhz 1640 pf output capacitance c oss 960 reverse transfer capacitance c rss 60 total gate charge q g v ds = 50 v, v gs = 10 v, i d = 10 a 31.8 48 nc v ds = 50 v, v gs = 7.5 v, i d = 10 a 25 37.5 v ds = 50 v, v gs = 4.5 v, i d = 10 a 16.9 25.5 gate-source charge q gs 4.8 gate-drain charge q gd 7.9 gate resistance r g f = 1 mhz 0.8 3.6 7.2 ? tu r n - o n d e l ay t i m e t d(on) v dd = 50 v, r l = 5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? 11 22 ns rise time t r 918 turn-off delay time t d(off) 36 70 fall time t f 11 22 tu r n - o n d e l ay t i m e t d(on) v dd = 50 v, r l = 5 ? i d ? 10 a, v gen = 7.5 v, r g = 1 ? 12 24 rise time t r 14 28 turn-off delay time t d(off) 35 70 fall time t f 10 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 40 a pulse diode forward current a i sm 80 body diode voltage v sd i s = 4 a 0.76 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 52 100 ns body diode reverse recovery charge q rr 65 120 nc reverse recovery fall time t a 22 ns reverse recovery rise time t b 30
vishay siliconix SIR876DP document number: 65934 s10-2684-rev. b, 22-nov-10 www.vishay.com 3 new product typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 0 0.5 1.0 1.5 2.0 2.5 16 32 48 64 80 v ds - drain-to-source voltage (v) i d - drain current (a) v gs = 4 v v gs = 10 v thru 5 v v gs = 3 v 0.006 0 1632486480 0.008 0.010 0.012 0.014 0.016 i d - drain current (a) r ds(on) - on-resistance ( ) v gs = 4.5 v v gs = 7.5 v v gs = 10 v 0 7 14 21 28 35 v gs - gate-to-source voltage (v) q g - total gate charge 0 2 4 6 8 10 i d = 10 a v ds = 75 v v ds = 25 v v ds = 50 v transfer characteristics capacitance on-resistance vs. junction temperature 0 012345 2 4 6 8 10 v gs - gate-to-source voltage (v) i d - drain current (a) t c = 25 c t c = - 55 c t c = 125 c 0 0 20406080100 600 1200 1800 2400 3000 v ds - drain-to-source voltage (v) c - capacitance (pf) c rss c oss c iss 0.5 - 50 - 25 25 75 125 0 50 100 150 0.8 1.4 1.1 1.7 2.0 r ds(on) - on-resistance (normalized) t j - junction temperature (c) i d = 20 a v gs = 10 v v gs = 4.5 v
www.vishay.com 4 document number: 65934 s10-2684-rev. b, 22-nov-10 vishay siliconix SIR876DP new product typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.001 0.0 0.2 0.6 1.0 0.4 0.8 1.2 0.01 1 0.1 10 100 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c - 0.8 - 50 - 25 25 75 125 0 50 100 150 - 0.6 - 0.2 - 0.4 0.0 0.2 0.4 t j - junction temperature (c) v gs(th) - variance (v) i d = 5 ma i d = 250 a on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 01 3 2457 68910 0.048 0.036 0.024 0.012 0.060 v gs - gate-to-source voltage (v) r ds(on) - on-resistance ( ) i d = 20 a t j = 125 c t j = 25 c 0 0.001 0.01 0.1 1 10 40 80 120 160 200 time (s) power (w) safe operating area, junction-to-ambient 0.01 0.01 0.1 1 100 10 0.1 1 10 100 v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified i d - drain current (a) limited by r ds(on) * bvdss limited t a = 25 c single pulse 1 ms 10 ms 1 s 10 s 100 ms dc
vishay siliconix SIR876DP document number: 65934 s10-2684-rev. b, 22-nov-10 www.vishay.com 5 new product typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 0 25 50 75 100 150 125 12 24 36 48 60 t c - case temperature (c) i d - drain current (a) package limited power, junction-to-case 0 0 25 50 75 100 125 150 15 30 45 60 75 t c - case temperature (c) power (w) power, junction-to-ambient 0 0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 t a - ambient temperature (c) power (w)
www.vishay.com 6 document number: 65934 s10-2684-rev. b, 22-nov-10 vishay siliconix SIR876DP new product typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65934 . normalized thermal transient im pedance, junction-to-ambient 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.1 0.01 square wave pulse duration (s) normalized effective transient thermal impedance notes: 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. surface mounted t 1 p dm t 2 duty cycle = 0.5 single pulse 0.2 0.05 0.1 0.02 normalized thermal transient impedance, junction-to-case 10 -4 10 -3 10 -2 10 -1 1 1 0.1 0.01 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.05 0.02 duty cycle = 0.5 0.2 0.1
package information www.vishay.com vishay siliconix revison: 20-may-13 1 document number: 71655 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8, (single/dual) millimeters inches dim. min. nom. max. min. nom. max. a 0.97 1.04 1.12 0.038 0.041 0.044 a1 - 0.05 0 - 0.002 b 0.33 0.41 0.51 0.013 0.016 0.020 c 0.23 0.28 0.33 0.009 0.011 0.013 d 5.05 5.15 5.26 0.199 0.203 0.207 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.56 3.76 3.91 0.140 0.148 0.154 d3 1.32 1.50 1.68 0.052 0.059 0.066 d4 0.57 typ. 0.0225 typ. d5 3.98 typ. 0.157 typ. e 6.05 6.15 6.25 0.238 0.242 0.246 e1 5.79 5.89 5.99 0.228 0.232 0.236 e2 (for al product) 3.30 3.48 3.66 0.130 0.137 0.144 e2 (for other product) 3.48 3.66 3.84 0.137 0.144 0.151 e3 3.68 3.78 3.91 0.145 0.149 0.154 e4 (for al product) 0.58 typ. 0.023 typ. e4 (for other prod uct) 0.75 typ. 0.030 typ. e 1.27 bsc 0.050 bsc k (for al product) 1.45 typ. 0.057 typ. k (for other produc t) 1.27 typ. 0.050 typ. k1 0.56 - - 0.022 - - h 0.51 0.61 0.71 0.020 0.024 0.028 l 0.51 0.61 0.71 0.020 0.024 0.028 l1 0.06 0.13 0.20 0.002 0.005 0.008 ? 0 - 12 0 - 12 w 0.15 0.25 0.36 0.006 0.010 0.014 m 0.125 typ. 0.005 typ. ecn: c13-0702-rev. k, 20-may-13 dwg: 5881 3. dimensions exclusive of mold flash and cutting burrs. 1. notes 2 inch will govern. dimensions exclusive of mold gate burrs. backside view of single pad backside view of dual pad detail z d d1 d2 c a e1 d1 e2 d2 e b 1 2 3 4 h 4 3 2 1 1 2 3 4 b l d2 d3 (2x) z a1 k1 k d e w l1 d5 e3 d4 e4 e4 k l h e2 d4 d5 m e3 2 2
application note 826 vishay siliconix document number: 72599 www.vishay.com revision: 21-jan-08 15 application note recommended minimum pads for powerpak ? so-8 single 0.174 (4.42) recommended mi nimum pads dimensions in inches/(mm) 0.260 (6.61) 0.024 (0.61) 0.154 (3.91) 0.150 (3.81) 0.050 (1.27) 0.050 (1.27) 0.032 (0.82) 0.040 (1.02) 0.026 (0.66) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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